Product Details
Ion beam - Ga ions
Energy - 40 kV & 60-100 n
Resolution - 5 nm @ 40 kV
E beam - Schotkey diode
Energy – 30 kV variable current
Resolution – 1 nm @ 30 kV
Features
Provides ultra-high-resolution FE SEM
Exceptional ion milling stability and high performance
Automated mill-and-monitor operations for 3D reconstructions
Slicing steps less than 10 nm
Dual optics mode with magnetic-field-free live imaging during FIB milling
Analytical Capabilities: EDS, EBSD
Applications
Nanolithography
TEM Sample Prep
Sample manipulation
Surface treatment
3D Microscopy
Ion imaging
Ion-induced SE imaging
Product Details
* Best resolution at Clemson University
Source - LaB6
Resolution - 0.102 nm lattice; 0.180 point
Magnification
Zoom1: xx1,000 – xx1,500,000
Zoom2 (SA): x4,000 – x500,000
Low Mag: x200 – x500
Acceleration Voltage - 300keV (standard); 200 keV; 100keV
In addition to basic operations, this microscope has various research features including:
Intermediate lens stigmation correction
Objective lens stigmation correction
Image recording on Gatan CCD camera
Selected-area electron diffraction (SAED)
Elemental Analysis using QUANTAX ESPRIT EDS
Applications
Inorganic materials
Polymeric materials
Monitoring crystal lattice
Diffraction analysis
Download information on the capabilities of the Autosorb iQ instrument.
Product Details
Quantachrome Autosorb iQ Gas Sorption Analyzer, Clemson University, Clemson South Carolina
Clemson recently acquired a gas sorption analyzer that provides new capabilities for characterizing porous materials. The instrument is a Quantachrome Autosorb iQ, pictured right. It is capable of making a wide variety of gas physisorption and chemisorption measurements on solid samples, that may be complementary to microscopic measurements of sample structure on sub-micrometer scales.
For information on rates, click here.
For information on how to submit samples for analysis, click here for chemisorption analysis or click here for physisorption analysis.
Instructions
--If this is your first time running samples for BET measurements, we recommend to run one sample to gauge overall time and conditions needed to complete analysis. Users must approve data and analysis conditions before the rest of the sample set can be analyzed.
--Users must provide at least 100mg powder samples for BET measurements. This should ensure samples have enough surface area for analysis. IF YOUR SAMPLE IS EXTREMELY MICROPOROUS: please let us know as we will need to recycle sample weight to limit analysis time and sample analysis cost.
--If the degas temperature is below 100 degrees, the degas time must be at least 12 hours. Data must be approved by PI/users before the full sample set is run. If your sample does not degas enough then the data is not useable. If you would like to be confident in the degas process your sample should be degassed: then run: the degassed : then run. If both runs agree then the data is good. Please let us know if you would like to apply this approach.
--For BET measurements using krypton gas involving very low surface area, samples will only be run with the 11 point process and only surface area can be measured. For more detailed experimentation and additional costs, please consult with the facility.
Download information on the capabilities of the HD2000 Scanning Transmission Electron Microscope.
Product Details
Source - Field Emission
Resolution - 0.24 nm at 200 kV
Magnification -X 2,000,000
Features
Fast sample throughput 20 to 30 times faster than TEM
Chemical analysis with EDS
Ideally suited for industrial applications where faster sample throughput and TEM resolution is required
Energy Dispersive Spectroscopy (EDS)
Spot/Linescan/Mapping 0.8nm/0.5nm/0.3nm
Product Details
The new Hitachi HT7830 UHR 120kV TEM joins the instrumentation fleet at Clemson AMRL. Procuring the very first unit in the US of this innovative technology, the EM Facility at AMRL is at the very cutting edge of modern EM technologies to serve a diverse array of research. This is the latest and Hitachi’s most advanced TEM designed to operate tunable accelerating voltage range of 20 kV-120 kV. This microscope incorporates Hitachi’s Dual-mode objective lens technology that allows users to image their specimens in a variety of conditions such as low magnification, wide-field high contrast, high resolution, and more—all in one microscope.
Resolution
0.14 nm at 120 kV
Magnification
x1,000,000
Applications
Highly useful for biological materials, polymers and sensitive samples where surface damage from high energy e-beams can be minimized by energy tuning
For academia and industry from a variety of disciplines
For more information, click here.
Specifications
Regulus8230 UHR Cold Field Emission Scanning Electron Microscope
Max e-beam energy: 30 kV
Computer Controlled 5-Axis Motorized Stage (110mm x 110mm)
Triple Electron Detector System w/Super ExB Technology
SE Resolution: 0.7nm @ 15kV, 0.9nm @ 1kV
Max. Magnification: 2,000,000x
Top Filter Function
Real Time Image Processing Function (534-9380)
8" Specimen Exchange Airlock
Beam Deceleration System
TMP Dry Vacuum System
LN2 Anti-contamination Trap
Oxford EDS Detector
Hardware includes:
--UltimMax 100 - 100mm2 sensor size.
--Resolution guaranteed on Mn K - 127eV at 130,000 cps.
--Includes SATW window for detection of elements from Beryllium.
--X4 Pulse Processor and Imaging Electronics - An Ethernet based Module that provides X, Y scan generation and X-Ray acquisition and detection.
AZtecLive Advanced Microanalysis System with UltimMax 100mm large area Analytical Silicon Drift Detector.
'AZtecLive' step, which enables the quick and comprehensive investigation of a sample with real-time chemical feedback plus all the tools required to perform qualitative and quantitative analysis, image capture, image centric analysis and X-ray spectral mapping and line scanning.
Live X-ray Maps, Live Trace, Tru-Q analysis engine, Point and ID, AutoID
Standardless quantitative analysis
Spectral imaging
TruMap and TruLine background and overlap-corrected mapping
AutoLock Drift Correction
AutoLayer element and phase visualization
AutoPhaseMap
Applications
SE signal - Ultra high resolution topmost surface observation (ex) material such as carbon)
BSE-L Signal - Microscopy of a wide range. Suppressing edge contract, enhanced compositional info, reducing specimen charging artifact
BSE-H Signal - Microscopy of enhanced compositional contrast or inner structures. Low signal may limit applications for certain materials
Product Details
The new Hitachi SU9000 CFE SEM/STEM joins the instrumentation fleet at Clemson AMRL. This is the world's most advanced ultra-high-resolution SEM and the only unit in the US equipped with ultra-high-performance imaging as well as EDS and EELS analytical capabilities, the SU9000EA will allow users to redefine boundaries and break new ground for materials/biological research.
Source
Cold Field Emission
Resolution /0.4nm guaranteed at 30kV (SE)
1.2nm guaranteed at 1kV (SE)
0.34nm guaranteed at 30kV (STEM)
Accelerating Voltage
0.5 - 30kV (100V step)
Magnification Range
Magnification on Display Monitor
LM mode: 220x - 25,000x
HM mode: 2,200x - 8,000,000x
Magnification on 4" x 5" Polaroid size
LM mode: 80x - 10,000x
HM mode: 800x - 3,000,000x
For more information, click here.
Product Details
*Designed for high resolution work at variable pressure
*Magnification up to 300K
Resolution - 1 nm @ 30 kV
Source - Schottky (FE)
Magnification: 10 – 600,000X
Max Sample size: 150mm diameter 40mmH
Features
Max probe current: 200nA for EDX, WDX, and EBSP
Analysis of non-conductive samples through advances variable pressure
High resolution imaging with Everhard-Thornly Secondary Electron Detector (SED)
Simultaneous usage of EDX, WDX, and EBSP
Large, 5-axis, computer eucentric, motor-drive stage
Product Details
The NEW Hitachi SU5000 VP-SEM with Schottky Field Emission source was recently added to EM Facility at AMRL. This large chamber microscope operates in a variable pressure as well as high vacuum modes allowing more flexibility to handle wide range of specimens. Hitachi’s latest computer-assisted technology is incorporated in SU5000. The microscope has UV detector capable to image sample topography at variable pressures. This microscope is also equipped with oxford EDS, WDS and EBSD detectors.
Resolution
1.2nm (@ 30kV, WD=5mm, Mag. 180kx)
3.0nm (@1kV, WD=3mm, Mag. 80kx)
2.0nm (@1kV, WD=3mm, Mag. 120kx) with Beam Deceleration
Source
Schottky Field Emission
Magnification - 8" diameter and up to 80mm in height
Applications
UV detector to image sample topography at variable pressures
Large area chamber – highly useful for private industry users
Variable pressure technology – allows users to image their samples with no coating required
Useful for biological and polymer samples
For more information, click here.
Product Details
Source - Tungsten filament
Resolution - 3 nm @ 30 kV , 10 nm @ 3 kV, 4 nm @ 30 kV (BSE)
Magnification - upto 300k
Usage
Chemical and Structure Analysis
Fine beam of electrons with spot of display cathode ray tube allows visualization of material
Applications
Charge free sample surface
No need to coat conducting layer
Magnification up to 300K
Chemical and structure analysis
Operating Variables
Accelerating Voltage (Vacc): high kV causes:
High resolution, more specimen damage, more specimen charge, less surface detail
Emission current (le): high current results in:
High signal, more specimen damage, more specimen charge
Probe current (spot size): low current for:
Higher resolution, less signal, less specimen damage, less specimen charge
Final aperture (1to4) small aperture for:
High depth of field, low signal levels, less specimen charge, less specimen damage
Working distance (5-65) short distance for:
High resolution, less depth of field, higher magnification
Samples
*ensure sample height is under the limit as to not damage the NNB (Backscatter Electron Detector)
Powder samples, Solid Pieces, Biological Specimens
Common sample stubs: any M4 thread mounts, any 1/9 inch pin mounts
Product Details
X-Ray Photoelectron Spectroscopy and Auger Electron Spectroscopy (XPS & AES)
XPS is a surface sensitive spectroscopic technique to measure elemental composition with chemical and electronic state of the elements from sample material. The technique is based on X-ray irradiation of material that results in emission of photoelectrons from up to ~10 nm of the surface. XPS can be used to analyze the surface chemistry of a material in its as-received state.
Auger electron spectroscopy (AES) is also a surface sensitive spectroscopic technique. The Auger effect is a physical phenomenon in which the filling of an inner-shell vacancy of an atom is accompanied by the emission of an electron from the same atom. When a core electron is emitted, creating vacancy, an electron from a higher energy level fills the vacancy, resulting in a release of energy. Often this energy is emitted in the form of a photon, sometimes the energy can also be transferred to another electron, which is ejected from the atom; this second ejected electron is called an Auger electron.
At Clemson University Electron Microscopy Facility, we have combined Physical Electronics PHI VersaProbe III Scanning ESCA Microprobe (XPS) and Scanning Auger Electron Spectroscopy (AES) capabilities with following features:
- XPS Instrumentation with “scanning” monochromatic x-ray source, a motorized specimen stage, an electron energy analyzer and state-of-the-art associated electron optics.
- Small spot (<10 µm ) scanning X-ray source and imaging capabilities designed on similar approach used for electron microscopy. The instrument is be capable of producing and displaying a secondary electron (SE) image generated by the raster scanned x-ray spot. Multiple regions for further spectral analysis within the field of view is selectable from the captured image using the instrument software, without changing the position of the specimen or translating the specimen stage.
- The instrument is capable of <10um multi-point analysis within the FOV without moving the stage. Types of analysis include survey spectra, high-resolution spectra, and multi-point depth profiling.
- The instrument is equipped with a 180° hemispherical electron analyzer designed for small spot sensitivity for secondary electrons, photoelectrons, and auger electrons.
- The instrument will have a charge neutralization capability that permits the analysis of electrically insulating materials. This is based upon a dedicated adjustable low-energy electron source, which may be used in conjunction with a low-energy ion source.
- The instrument is equipped with a computer-controlled ion gun capable of removing material from specimens by bombarding with argon (Ar) ions. This is useful during sputter depth profile experiments.
- The instrument is equipped with a C60 cluster ion gun, adjustable up to 20 kV, aligned to sputter the specimen at the analysis point without translation of the specimen. The instrument is capable of sputtering a mixture or alternating layers of inorganic and organic films.
- The instrument will have an electron gun controlled by the same computer and operating software to capture Auger Electron Spectra. The electron source is capable of producing spot size <100nm for AES imaging and spectra. Switching between XPS and AES will take less than 5 seconds.
- The instrument will contain a precision five (5) axis (X, Y, Z, rotation, tilt) motorized stage. The stage is capable of continuous motorized 360 deg. rotation during ion sputtering.
- The instrument will have a sample heating stage. The sample stage is capable of in-situ heating and cooling from -140 C to +600 C.
- The instrument is equipped with an automated bake out system capable of baking out the instrument. The instrument will allow the bake out time to be operator selectable, and will include automatic shutoff of the bake out system when done. The instrument is equipped with interlocks to terminate the bake out in the event of pressure overload, ion pump failure, or excessive temperatures.
Features
Table top SEM with EDS capability
Sputter Coaters
Cryo-microtome
Sample cutting and polishing
Microtome
Polishers