Title:

Novel Fabrication Process for Gallium Oxide and Nitride Nanowires
(Thermal CVD Synthesis of Nanowires)
Case # 298
Inventors: Apparao Rao, Rahul Rao
Summary: Semiconducting nanowires have attracted much attention recently due to their unique electronic and optical properties. We have developed a novel method for preparing nanowires and nanobelts of oxides, sulfides and nitrides of low melting metals such as gallium, indium and tin. These nanostructures are synthesized using metal films and corresponding reactant gases at ambient pressure in a catalyst-free thermal CVD reactor process. The nanowire diameters range from 10-100 nm in diameter with lengths up to several microns.  
Applications: Nanoelectronics, nanosensors and nanolasers.
Patent Status: Patent application has been filed.  Detailed information must be provided under a confidential disclosure agreement. Please download the confidential disclosure form and mail the completed form to:

Vincie Albritton, Interim Director of Technology Transfer
A.M.R.L.
Clemson Research Park
91 Technology Drive
Anderson, SC 29625-5705
PH: 864-656-5708
FAX: 864-656-0474
Email: valbrit@clemson.edu
Licensing: The technology is available for non-exclusive or exclusive field of use licensing.
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Fax: (864) 656-0474
email: valbrit@clemson.edu

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